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GMS30000EVA Datasheet(PDF) 18 Page - Hynix Semiconductor |
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GMS30000EVA Datasheet(HTML) 18 Page - Hynix Semiconductor |
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18 / 105 page  2 - 1 CHAPTER 2. Architecture BLOCK DESCRIPTION Characteristics The GMS340 series can incorporate maximum 1024 words (64 words ¡¿ 16 pages ¡¿ 8bits) for program memory. Program counter PC (A0~A5) and page address register (A6~A9) are used to address the whole area of program memory having an instruction (8bits) to be next executed. The program memory consists of 64 words on each page, and thus each page can hold up to 64 steps of instructions. The program memory is composed as shown below. 0 1 2 3 4 5 6 7 8 63 Program counter (PC) Page address register (PA) Page buffer (PB) 6 4 (Level ¡È1¡È) (Level ¡È2¡È) (Level ¡È3¡È) (PRS) (SR) Stack register Page 0 Page 1 Page 2 Page 15 A0~A5 0 1 2 15 A6~A9 Program capacity (pages) Fig 2-1 Configuration of Program Memory Chapter 2. Architecture |
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