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2SC4617XT1G Datasheet(PDF) 2 Page - Bruckewell Technology LTD |
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2SC4617XT1G Datasheet(HTML) 2 Page - Bruckewell Technology LTD |
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2 / 5 page ![]() 2SC4617XT1G General Purpose Transistors NPN Silicon Publication Order Number: [2SC4617XT1G] © Bruckewell Technology Corporation Rev. A -2014 ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified Symbol Parameter Test Conditions MIN TYP MAX UNIT BVCBO Collector-base breakdown voltage IC = 50μA 60 V BVCEO Collector-emitter breakdown voltage IC = 1 mA 50 V BVEBO Emitter-base breakdown voltage IE = 50μA 7 V ICBO Collector cut-off current VCB = 60 V 0.1 μA IEBO Emitter cut-off current VEB = 7 V 0.1 μA hFE DC current gain VCE = 6 V , IC = 1 mA 120 560 -- VCE(sat) Collector-emitter saturation voltage IC/IB = 50 mA / 5 mA 0.5 V fT Transition frequency VCE = 12 V , IE = 2 mA f = 30MHz 180 MHz Cob Collector output capacitance VCB = 12 V , IE = 0 A f = 1.0MHz 2.0 3.5 pF hFE values are classified as follows: Item Q R S hFE 120-170 180-390 270-560 ORDERING INFORMATION Device Marking Shipping 2SC4617QT1G BQ 3000 Tape & Reel 2SC4617QT3G BQ 10000 Tape & Reel 2SC4617RT1G BR 3000 Tape & Reel 2SC4617RT3G BR 10000 Tape & Reel 2SC4617ST1G BS 3000 Tape & Reel 2SC4617ST3G BS 10000 Tape & Reel |
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