MSF5N50 datasheet(2/8 Pages) BWTECH

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MSF5N50

500V N-Channel MOSFET

Publication Order Number: [MSF5N50]

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Power Dissipation (TC=25°C)

Power Dissipation (TC=100°C)

0.3

W/°C

TSTG

Operating and Storage Temperature Range

-55 to +150

°C

NOTE:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ =25°˚C

3. ISD≤4.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C

4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature

Static Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VGS

VDS = VGS, ID = 250μA

2.0

4.0

*RDS(ON)

VGS = 10 V , ID = 2.25 A

1.2

1.5

BVDSS

VGS = 0 V , ID = 250μA

500

△BV

DSS /△TJ

ID = 250μA, Referenced to 25°C

0.4

V/°C

IDSS

VDS = 500 V , VGS = 0 V

VDS = 400 V , VGS = 0 V , Tj = 125°C

100

IGSSF

VDS = 30 V, VDS = 0 V

100

IGSSR

VDS = -30 V, VDS = 0 V

-100

Dynamic Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VDS = 400 V,ID = 4.5 A,

VGS = 10 V

Qgs

2.5

Qgd

td(on)

VDS = 250 V, ID = 2.5 A,

RG = 25 Ω

td(off)

CISS

VDS = 25 V, VGS = 0 V,

f = 1.0MHz

550

720

COSS

105

CRSS

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