BAS40 datasheet(1/2 Pages) GSME

Part #	BAS40

Description	SCHOTTKY DIODE

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	GSME [Guilin Strong Micro-Electronics Co., Ltd.]

Direct Link	http://www.gsme.com.cn

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桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

BAS40

SCHOTTKY DIODE 肖特基二極管(BAS40)

▉

FEATURES

特點

Characteristic 特性參數

Symbol 符號

Max 最大值

Unit 單位

Power dissipation 耗散功率

PD(Ta=25℃)

225

mW

Forward Current 正向電流

IF

100

mA

Reverse Voltage 反向電壓

VR

40

V

Junction and Storage Temperature

結溫和儲藏溫度

TJ,Tstg

-55to+150℃

▉

DEVICE MARKING

打標

BAS40=43

▉

ELECTRICAL CHARACTERISTICS

電特性

(TA

=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Symbol

符號

Min

最小值

Max

最大值

Unit

單位

Reverse Breakdown Voltage 反向擊穿電壓

(IR=10uA)

V(BR)

40

—

V

Reverse Leakage Current 反向漏電流

(VR=25V)

IR

—

1

uA

Forward Voltage(Test Condition)正向電壓

IF= 1mAdc

IF= 10mAdc

IF= 40mAdc

VF

—

380

500

1000

mV

Diode Capacitance 二極體電容

(VR=1V, f=1MHz)

CD

—

5

pF

Reverse Recovery Time 反向恢復時間

Trr

—

5

nS

▉

SOT-23

内部结构

1

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BAS40 Datasheet(PDF) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

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