MMBTA14 datasheet(1/2 Pages) MAKOSEMI

Part #	MMBTA14

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Direct Link	http://www.makosemi.hk/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

• Darlington Amplifier

Marking:

MMBTA13 :K2D

MMBTA14 :K3D

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

10

V

Collector Current -Continuous

IC

0.3

A

Collector Power dissipation

PC

0.3

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

Thermal Resistance Junction to Ambient

RθJA

417

/W

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC= 100

μA,

IE=0

30

V

Collector-emitter breakdown voltage

VCEO

IC= 100uA, IB=0

30

V

Collector-emitter breakdown voltage

VEBO

IE= 100

μA, IC=0

10

V

Collector cut-off current

ICBO*

VCB=30 V ,

IE=0

0.1

μA

Emitter cut-off current

IEBO*

VEB= 10V ,

IC=0

0.1

μA

DC current gain

hFE(1) *

VCE=5V, IC= 10mA

MMBTA13

MMBTA14

5000

10000

hFE(2) *

VCE=5V, IC= 100mA

MMBTA13

MMBTA14

10000

20000

Collector-emitter saturation voltage

VCE (sat)*

IC=100mA, IB=0.1mA

1.5

V

Base-emitter saturation voltage

VBE (sat) *

IC=100mA, IB=0.1mA

2

V

Base-emitter voltage

VBE *

VCE=5V,IC= 100mA

2.0

V

Transition frequency

fT

VCE=5V,

IC= 10mA ,

f=100MHz

125

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

12

pF

* Pulse Test : pulse width≤300μs,duty cycle≤2%.

MMBTA13/14 (NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MAKO Semiconductor Co., Limited 4008-378-873

http://www.makosemi.hk/

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