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28F008SA-L Datasheet(PDF) 21 Page - Intel Corporation |
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28F008SA-L Datasheet(HTML) 21 Page - Intel Corporation |
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21 / 28 page ![]() 28F008SA-L DC CHARACTERISTICS (Continued) VCC e 50V g10% Symbol Parameter Notes Min Typ Max Unit Test Condition VPPH VPP during EraseWrite 114 120 126 V Operations VLKO VCC EraseWrite Lock 20 V Voltage NOTES 1 All currents are in RMS unless otherwise noted Typical values at VCC e 50V VPP e 120V T e 25 C These currents are valid for all product versions (packages and speeds) 2 ICCES is specified with the device deselected If the 28F008SA-L is read while in Erase Suspend Mode current draw is the sum of ICCES and ICCR 3 Includes RYBY 4 Block ErasesByte Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and VPPL AC INPUTOUTPUT REFERENCE WAVEFORM 290435 – 7 AC test inputs are driven at 30V for a Logic ‘‘1’’ and 00V for a Logic ‘‘0’’ Input timing begins and output timing ends at 15V Input rise and fall times (10% to 90%) k 10 ns AC TESTING LOAD CIRCUIT(2) CL e 50 pF CL Includes Jig 290435 – 8 Capacitance RL e 33 kX AC CHARACTERISTICSRead-Only Operations(1) VCC e 33V g03V 50V g10% Versions 28F008SA-150 Unit Symbol Parameter Notes Min Max tAVAV tRC Read Cycle Time 150 ns tAVQV tACC Address to Output Delay 150 ns tELQV tCE CE to Output Delay 2 150 ns tPHQV tPWH RP High to Output Delay 600 ns tGLQV tOE OE to Output Delay 2 75 ns tELQX tLZ CE to Output Low Z 3 0 ns tEHQZ tHZ CE High to Output High Z 3 55 ns tGLQX tOLZ OE to Output Low Z 3 0 ns tGHQZ tDF OE High to Output High Z 3 30 ns tOH Output Hold from Addresses CE or OE 30 ns Change Whichever is First NOTES 1 See AC InputOutput Reference Waveform for timing measurements 2 OE may be delayed up to tCE–tOE after the falling edge of CE without impact on tCE 3 Sampled not 100% tested 21 |
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