C945 datasheet(1/2 Pages) MAKOSEMI

Part #	C945

Description	Complementary to A733

PDF	2 Pages

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Manufacturer	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Direct Link	http://www.makosemi.hk/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

Complementary to A733

MARKING: CR

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

60

V

Collector-Emitter Voltage

V

CEO

50

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

150

mA

Collector Power Dissipation

PC

0.4

W

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=1mA , IE=0

60

V

Collector-emitter breakdown voltage

VCEO

IC=100uA , IB=0

50

V

Emitter-base breakdown voltage

VEBO

IE=100mA, IC=0

5

V

Collector cut-off current

ICB

O

VCB=60V, IE=0

0.1

uA

Collector cut-off current

ICE

O

VCE=45V

0.1

uA

Emitter cut-off current

IEB

O

VEB=5V ,

IC=0

0.1

uA

DC current gain

hFE(1)

VCE=6 V ,

IC=1mA

70

700

hFE(2)

VCE=6 V ,

IC=0.1mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB=10mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB=10mA

1

V

Transition frequency

fT

VCE=6V,IC=10mA,f =30 MHz

200

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHZ

3.0

pF

Noise figure

NF

VCE=6V,IC=0.1mA

RG=10kΩ,f=1kMHZ

10

dB

CLASSIFICATION OF

hFE

Rank

O

Y

GR

BL

Range

70-140

120-240

200-400

350-700

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

C945

MAKO Semiconductor Co., Limited

4008-378-873

http://www.makosemi.hk/

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