Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

• Excellent hFE linearity

• High hFE

• Low Noise

• Complementary to KTA2014

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current -Continuous

0.15

A

Collector Power dissipation

0.1

W

Junction Temperature

150

Storage Temperature

Tstg

-55to +150

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

60

V

Collector-emitter breakdown voltage

50

V

Emitter-base breakdown voltage

5

V

Collector cut-off current

0.1

μA

Emitter cut-off current

0.1

μA

DC current gain

70

700

Collector-emitter saturation voltage

0.25

V

Transition frequency

80

MHz

Collector output capacitance

3.5

pF

Noise figure

NF

10

dB

Rank

O

Y

GR

BL

Range

70-140

120-240

200-400

350-700

Marking

LO

LY

LGR

LBL

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/