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MMBT4401 Datasheet(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

Part # MMBT4401
Description  Plastic-Encapsulate Transistors
PDF  2 Pages
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Manufacturer  MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]
Direct Link  http://www.makosemi.hk/
Logo MAKOSEMI - MAKO SEMICONDUCTOR CO.,LIMITED

MMBT4401 Datasheet(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

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Plastic-Encapsulate Transistors
FEATURES
Switching transistor
Marking:2X
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current -Continuous
I
C
600
mA
Collector Power Dissipation
PC
300
mW
Junction Temperature
T
J
150
Storage Temperature
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
VCBO
IC= 100μA, IE=0
60
V
Collector-emitter breakdown voltage
VCEO
IC= 1mA, IB=0
40
V
Emitter-base breakdown voltage
VEBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICB
O
VCB=50 V, IE=0
0.1
μA
Collector cut-off current
ICE
O
VCE=30 V, IB=0
0.1
μA
Emitter cut-off current
IEB
O
VEB=5V, IC=0
0.1
μA
DC current gain
hF
E
VCE=1V, IC=150mA
100
300
Collector-emitter saturation voltage
VCE(sat) IC=150mA, IB=15mA
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC= 150mA, IB=15mA
0.95
V
Transition frequency
fT
VCE= 10V, IC= 20mA
f = 100MHz
250
MHz
(NPN)
1. BASE
2. EMITTER
SOT-23
3. COLLECTO
MMBT4401
MAKO Semiconductor Co., Limited
4008-378-873
http://www.makosemi.hk/


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