2SB1119-R datasheet(1/3 Pages) KEXIN

Part #	2SB1119-R

Description	PNP Transistors

PDF	3 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB1119

■

Features

●

Very small size making it easy to provide high

highdensity, small-sized hybrid IC’s.

●

Complementary to 2SD1619

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-25

Collector - Emitter Voltage

VCEO

-25

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-1

Collector current -Pulse

ICP

-2

Collector Power Dissipation

0.5

(Note.1)

1.3

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

PC

W

Note.1: Mounted on ceramic board (250mm ×0.8mm)

2

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-25

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， RBE=∞

-25

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -20V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-500 mA, IB=-50mA

-0.15 -0.7

Base - emitter saturation voltage

VBE(sat) IC=-500 mA, IB=-50mA

-0.85 -1.2

VCE= -2V, IC= -50 mA

100

560

VCE= -2V, IC= -1 A

40

Collector output capacitance

Cob

VCB = –10V, IE = 0, f = 1MHz

25

pF

Transition frequency

fT

VCE= -10V, IC= -50mA

180

MHz

V

uA

DC current gain

hFE

V

■

Classification of hfe(1)

Type

2SB1119-R

2SB1119-S

2SB1119-T

2SB1119-U

Range

100-200

140-280

200-400

280-560

Marking

BB R*

BB S*

BB T*

BB U*

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2SB1119-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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