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2SB1122-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1122-R Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type www.kexin.com.cn 1 IC PNP Transistors 2SB1122 ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Complementary to 2SD1622 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector current -Pulse ICP -2 Collector Power Dissipation 0.5 (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB=-50mA -0.18 -0.5 Base - emitter saturation voltage VBE(sat) IC=-500 mA, IB=-50mA -0.9 -1.2 VCE= -2V, IC= -100 mA 100 560 VCE= -2V, IC= -1 A 30 Turn-ON Time ton 40 Storage Time tstg 300 Fall Time tf 30 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 12 pF Transition frequency fT VCE= -10V, IC= -50mA 150 MHz DC current gain hFE V See specified Test Circuit. ns V uA ■ Classification of hfe(1) Type 2SB1122-R 2SB1122-S 2SB1122-T 2SB1122-U Range 100-200 140-280 200-400 280-560 Marking BE R* BE S* BE T* BE U* |
Similar Part No. - 2SB1122-R |
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Similar Description - 2SB1122-R |
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