2SB1124-R datasheet(1/3 Pages) KEXIN

Part #	2SB1124-R

Description	PNP Transistors

PDF	3 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB1124

■

Features

●

Low collector-to-emitter saturation voltage.

●

Large current capacity and wide ASO.

●

Fast switching speed.

●

Complementary to 2SD1624

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-60

Collector - Emitter Voltage

VCEO

-50

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-3

Collector current -Pulse

ICP

-6

Collector Power Dissipation

0.5

(Note.1)

1.5

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

PC

W

Note.1: Mounted on ceramic board (250mm ×0.8mm)

2

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-60

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， RBE=∞

-50

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -50V , IE=0

-1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-2 A, IB=-100mA

-0.35 -0.7

Base - emitter saturation voltage

VBE(sat) IC=-2 A, IB=-100mA

-0.94 -1.2

VCE= -2V, IC= -100 mA

100

560

VCE= -2V, IC= -3 A

35

Turn-ON Time

ton

70

Storage Time

tstg

450

Fall Time

tf

35

Collector output capacitance

Cob

VCB = –10V, IE = 0, f = 1MHz

39

pF

Transition frequency

fT

VCE= -10V, IC= -50mA

150

MHz

DC current gain

hFE

V

See specified Test Circuit.

ns

V

uA

■

Classification of hfe(1)

Type

2SB1124-R

2SB1124-S

2SB1124-T

2SB1124-U

Range

100-200

140-280

200-400

280-560

Marking

BG R*

BG S*

BG T*

BG U*

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