2SB1184-R datasheet(1/3 Pages) KEXIN

Part #	2SB1184-R

Description	PNP Transistors

PDF	3 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB1184

■

Features

●

Low VCE(sat).VCE(sat) = -0.5V

●

Complementary to 2SD1760

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-60

Collector - Emitter Voltage

VCEO

-50

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-3

A

Collector Power Dissipation

Tc=25°C

15

Ta = 25℃

1

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

PC

W

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-60

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA, IB=0

-50

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -50V , IE=0

-1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-2 A, IB=-200mA

-1

Base - emitter saturation voltage

VBE(sat) IC=-2 A, IB=-200mA

-1.2

DC current gain

hFE

VCE= -3V, IC= -500 mA

120

390

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

50

pF

Transition frequency

fT

VCE= -5V, IE= 500mA,f= 30 MHz

70

MHz

V

uA

■

Classification of hfe

Type

2SB1184-Q

2SB1184-R

Range

120-270

180-390

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2SB1184-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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