2SD2150-R datasheet(1/2 Pages) KEXIN

Part #	2SD2150-R

Description	NPN Transistors

PDF	2 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

2SD2150

■

Features

●

Excellent current-to-gain characteristics

●

Low collector saturation voltage VCE(sat)

●

Complementary to 2SB1412

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

40

Collector - Emitter Voltage

VCEO

20

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

3

A

Collector Power Dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100uA， IE= 0

40

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

20

Emitter - base breakdown voltage

VEBO

IE= 100u A， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 35 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=2 A, IB=100mA

0.5

Base - emitter saturation voltage

VBE(sat) IC=2 A, IB=100mA

1.2

DC current gain

hFE

VCE= 2V, IC= 100mA

180

560

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

25

pF

Transition frequency

fT

VCE=2V,IC=500mA,f=100MHz

290

MHz

V

uA

V

■

Classification of hfe

Type

2SD2150-R

2SD2150-S

Range

180-390

270-560

Marking

CF R*

CF S*

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2SD2150-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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