2SA1579-R datasheet(1/2 Pages) KEXIN

Part #	2SA1579-R

Description	PNP Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SA1579

■

Features

●

High breakdown voltage. (BVCEO = -120V)

●

Complements the 2SC4102.

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-120

Collector - Emitter Voltage

VCEO

-120

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-50

mA

Collector Power Dissipation

PC

100

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -50 μA， IE=0

-120

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA，IB=0

-120

Emitter - base breakdown voltage

VEBO

IE= -50μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -100 V , IE=0

-0.5

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.5

Collector-emitter saturation voltage

VCE(sat) IC=-10 mA, IB=-1 mA

-0.5

Base - emitter saturation voltage

VBE(sat) IC=-10 mA, IB=-1 mA

-1.2

DC current gain

hFE

VCE= -6V, IC= -2mA

180

560

Collector output capacitance

Cob

VCB= -12V,IE=0, f=1MHz

3.2

pF

Transition frequency

fT

VCE= -12V, IC= -2mA,f=30MHz

140

MHz

V

uA

V

■

Classification of hfe

1.Base

2.Emitter

3.Collector

Type

2SA1579-R

2SA1579-S

Range

180-390

270-560

Marking

RR

RS

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2SA1579-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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