2SD2457-R datasheet(1/2 Pages) KEXIN

Part #	2SD2457-R

Description	NPN Transistors

PDF	2 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

2SD2457

■

Features

●

High collector to emitter voltage VCEO.

●

Large collector power dissipation PC.

●

Complementary to 2SB1599

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

50

Collector - Emitter Voltage

VCEO

40

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

1.5

Collector Current - Pulse

ICP

3

Collector Power Dissipation

PC

1

W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 1 mA， IE= 0

50

Collector- emitter breakdown voltage

VCEO

Ic= 2 mA， IB= 0

40

Emitter - base breakdown voltage

VEBO

IE= 1 mA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 50 V , IE= 0

1

Collector-emitter cut-off current

ICEO

VCE= 40 V , IB= 0

10

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=1.5 A, IB=150mA

1

Base - emitter saturation voltage

VBE(sat) IC=2 A, IB=200mA

1.5

DC current gain

hFE

VCE= 5V, IC= 1 A

80

220

Collector output capacitance

Cob

VCB=20V, IE=0, f=1MHz

45

pF

Transition frequency

fT

VCE=5V,IE=-500mA,f=200MHz

150

MHz

V

uA

V

■

Classification of hfe

Type

2SD2457-Q

2SD2457-R

Range

80-160

120-220

Marking

1YQ

1YR

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2SD2457-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

2SD2457-R Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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