2SA1419-R-HF datasheet(1/3 Pages) KEXIN

Part #	2SA1419-R-HF

Description	PNP Transistors

PDF	3 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

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Features

Adoption of FBET, MBIT Processes

High Breakdown Voltage and Large Current Capacity

Electrical Characteristics Ta = 25

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-180

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， RBE=∞

-160

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -120 V , IE=0

-1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-500mA, IB=- 25mA

-0.2

-0.5

Base - emitter saturation voltage

VBE(sat) IC=-500mA, IB=- 25mA

-0.85 -1.2

VCE= -5V, IC= -100mA

100

400

VCE= -5V, IC= -10mA

80

Turn-on time

ton

40

Storage time

ts

700

Fall time

tf

40

Output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

22

pF

Transition frequency

fT

VCE= -10V, IE= -50mA

120

MHz

DC current gain

hFE

See Test Circuit.

V

ns

uA

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-180

Collector - Emitter Voltage

VCEO

-160

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-1.5

Collector Current - Pulsed

ICP

-2.5

Collector Power Dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

■

Classification of hfe

●

Complementary to 2SC3649-HF

Type

2SA1419-R-HF 2SA1419-S-HF 2SA1419-T-HF

Range

100-200

140-280

200-400

Marking

AER* F

AES* F

AET* F

●

Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

PNP Transistors

2SA1419-HF

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