HGTP3N60B3D datasheet(2/7 Pages) INTERSIL

2 / 7 page

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

HGTP3N60B3D,

HGT1S3N60B3DS

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES

600

Collector Current Continuous

At TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

7.0

At TC = 110

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C110

3.5

Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG)

4.0

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

±20

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM

±30

Switching Safe Operating Area at TJ = 150

oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA

18A at 600V

Power Dissipation Total at TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

33.3

Power Dissipation Derating TC > 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.27

W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG

300

260

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC

µs

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. VCE(PK) = 360V, TJ = 125

oC, R

G = 82Ω.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

600

Collector to Emitter Leakage Current

ICES

VCE = BVCES

TC = 25

250

µA

TC = 150

2.0

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = IC110,

VGE = 15V

TC = 25

1.8

2.1

TC = 150

2.1

2.5

Gate to Emitter Threshold Voltage

VGE(TH)

IC = 250µA, VCE = VGE

4.5

5.4

6.0

Gate to Emitter Leakage Current

IGES

VGE = ±20V

±250

Switching SOA

SSOA

TJ = 150

oC, R

G = 82Ω, VGE = 15V

L = 500

µH, VCE = 600V

Gate to Emitter Plateau Voltage

VGEP

IC = IC110, VCE = 0.5 BVCES

7.9

On-State Gate Charge

Qg(ON)

IC = IC110,

VCE = 0.5 BVCES

VGE = 15V

VGE = 20V

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 25

ICE = IC110

VCE = 0.8 BVCES

VGE = 15V

RG = 82Ω

L = 1mH

Test Circuit (Figure 19)

-18

Current Rise Time

trI

-16

Current Turn-Off Delay Time

td(OFF)I

105

Current Fall Time

tfI

-70

Turn-On Energy

EON

-66

µJ

Turn-Off Energy (Note 1)

EOFF

160

µJ

HGTP3N60B3D, HGT1S3N60B3DS

HGTP3N60B3D Datasheet(PDF) 2 Page - Intersil Corporation

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