IRFD110 datasheet(2/6 Pages) INTERSIL

2 / 6 page

4-270

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFD110

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

100

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

1.0

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

8.0

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

1.0

Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.008

W/oC

Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 9)

100

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

4.0

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

1.0

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 0.8A, VGS = 10V (Figures 7, 8)

0.5

0.6

Ω

Forward Transconductance (Note 2)

gfs

VDS > ID(ON) x rDS(ON)MAX, ID = 0.8A (Figure 11)

0.8

1.2

Turn-On Delay Time

td(ON)

VDD = 0.5 x Rated BVDSS, ID ≈ 1.0A,

RG = 9.1Ω, RL = 50Ω

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-10

Rise Time

-15

Turn-Off Delay Time

td(OFF)

-15

Fall Time

-10

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID ≈ 1.0A, VDS = 0.8 x Rated BVDSS,

Ig(REF) = 1.5mA (Figure 13)

Gate Charge is Essentially Independent of

Operating Temperature

5.0

7.0

Gate to Source Charge

Qgs

2.0

Gate to Drain “Miller” Charge

Qgd

3.0

Input Capacitance

CISS

VGS = 0V, VDS = 25V, f = 1MHz

(Figure 10)

135

Output Capacitance

COSS

-80-

Reverse Transfer Capacitance

CRSS

-20-

Internal Drain Inductance

Measured from the Drain

Lead, 2mm (0.08in) from

Package to Center of Die

Modified MOSFET

Symbol Showing the

Internal Device’s

Inductances

4.0

Internal Source Inductance

Measured from the Source

Lead, 2mm (0.08in) from

Header to Source Bonding

Pad

6.0

Thermal Resistance Junction to Ambient

RθJA

Free Air Operation

120

oC/W

IRFD110

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