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RFD16N02LSM Datasheet(PDF) 2 Page - Intersil Corporation |
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RFD16N02LSM Datasheet(HTML) 2 Page - Intersil Corporation |
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2 / 8 page  2 Absolute Maximum Ratings TC = 25oC RFD16N02L, RFD16N02LSM UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 20 V Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 20 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 V Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 16 Refer to Peak Current Curve A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Refer to UIS Curve Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 0.606 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 175 oC Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 20 - - V Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA1 - 2 V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V TC = 25 oC- - 1 µA TC = 150 oC- - 50 µA Gate to Source Leakage Current IGSS VGS = ±10V - - ±100 nA Drain to Source On Resistance rDS(ON) ID = 16A, VGS = 5V - - 0.022 Ω Turn-On Time tON VDD = 15V, ID ≅ 16A, RL = 0.93Ω, VGS = 5V, RGS = 5Ω - - 120 ns Turn-On Delay Time td(ON) -15- ns Rise Time tr -95- ns Turn-Off Delay Time td(OFF) -25- ns Fall Time tf -27- ns Turn-Off Time tOFF - - 80 ns Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD ≅ 16V, ID ≈ 16A, RL = 1.0Ω -50 60 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 30 36 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 1.5 1.8 nC Input Capacitance CISS VDS = 20V, VGS = 0V, f = 1MHz - 1300 - pF Output Capacitance COSS - 724 - pF Reverse Transfer Capacitance CRSS - 250 - pF Thermal Resistance Junction to Case RθJC - - 1.65 oC/W Thermal Resistance Junction to Ambient RθJA TO-251 and TO-252 - - 100 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 16A - - 1.5 V Reverse Recovery Time trr ISD = 16A, dISD/dt = 100A/µs- - 80 ns RFD16N02L, RFD16N02LSM |
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