RFW2N06RLE datasheet(2/5 Pages) INTERSIL

2 / 5 page

6-284

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFW2N06RLE

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

-5 to 10

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

1.09

Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.009

W/oC

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Electrostatic Discharge Rating, MIL-STD-883, Catagory B(2). . . . . . . . . . . . . . . . . . . . . . . .ESD

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID =250µA, VGS = 0V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA1

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V

TC = 125

µA

Gate to Source Leakage Current

IGSS

VGS =-5V to 10V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 2A, VGS = 5V (Figure 8)

160

Ω

ID = 2A, VGS = 4.3V (Figure 8)

200

Ω

Turn-On Time

t(ON)

VDD = 30V, ID = 2A, RL = 15Ω, VGS = 5V,

RG = 25Ω (Figures 12, 13, 14)

100

Turn-On Delay Time

td(ON)

-13-

Rise Time

-42-

Turn-Off Delay Time

td(OFF)

-95-

Fall Time

-45-

Turn-Off Time

t(OFF)

200

Total Gate Charge

Qg(TOT)

VGS = 0 to 10V

VDD = 48V, ID = 2A,

IG(REF) =0.5mA,

RL = 24Ω

(Figures 12, 15, 16)

-20

Gate Charge at 5V

Qg(5)

VGS = 0 to 5V

Threshold Gate Charge

Qg(TH)

VGS = 0 to 1V

0.6

1.0

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

(Figure 11)

535

Output Capacitance

COSS

175

Reverse Transfer Capacitance

CRSS

-32-

Thermal Resistance, Junction to Ambient

RθJA

115

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 2A

1.2

Reverse Recovery Time

trr

ISD = 2A, dlSD/dt = 100A/µs

200

NOTES:

2. Pulse test: width

≤ 300µs duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

RFW2N06RLE

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