Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

NCE1530KC Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

Part # NCE1530KC
Description  NCE N-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Direct Link  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE1530KC Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

  NCE1530KC Datasheet HTML 1Page - Wuxi NCE Power Semiconductor Co., Ltd NCE1530KC Datasheet HTML 2Page - Wuxi NCE Power Semiconductor Co., Ltd NCE1530KC Datasheet HTML 3Page - Wuxi NCE Power Semiconductor Co., Ltd NCE1530KC Datasheet HTML 4Page - Wuxi NCE Power Semiconductor Co., Ltd NCE1530KC Datasheet HTML 5Page - Wuxi NCE Power Semiconductor Co., Ltd NCE1530KC Datasheet HTML 6Page - Wuxi NCE Power Semiconductor Co., Ltd NCE1530KC Datasheet HTML 7Page - Wuxi NCE Power Semiconductor Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
Wuxi NCE Power Co., Ltd
Page
v1.0
2
NCE1530KC
Pb Free Product
http://www.ncepower.com
Electrical Characteristics (TC=25℃unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
150
165
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=150V,VGS=0V
-
-
1
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
2.5
3.5
4.5
V
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=20A
-
63
72
mΩ
gFS
Forward Transconductance
VDS=5V,ID=10A
-
20
-
S
Dynamic Characteristics
(Note4)
Clss
Input Capacitance
-
990
-
PF
Coss
Output Capacitance
-
90
-
PF
Crss
Reverse Transfer Capacitance
VDS=75V,VGS=0V,
F=1.0MHz
-
31
-
PF
Switching Characteristics
(Note 4)
td(on)
Turn-on Delay Time
-
10.5
-
nS
tr
Turn-on Rise Time
-
5.5
-
nS
td(off)
Turn-Off Delay Time
-
14.5
-
nS
tf
Turn-Off Fall Time
VDD=75V,RL=5Ω
VGS=10V,RGEN=3Ω
-
3
-
nS
Qg
Total Gate Charge
-
20
-
nC
Qgs
Gate-Source Charge
-
4.5
-
nC
Qgd
Gate-Drain Charge
VDS=75V,ID=10A,
VGS=10V
-
5.5
-
nC
Drain-Source Diode Characteristics
VSD
Diode Forward Voltage
(Note 3)
VGS=0V,IS=30A
-
-
1.2
V
IS
Diode Forward Current
(Note 2)
-
-
-
30
A
trr
Reverse Recovery Time
-
23
-
nS
Qrr
Reverse Recovery Charge
TJ = 25°C, IF = 10A
di/dt = 100A/μs
(Note3)
-
35
-
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25 ,V
DD=50V,VG=10V,L=0.5mH,Rg=25Ω



Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com