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KS05V4 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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KS05V4 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page ![]() Elektronische Bauelemente KS05V4 Low Capacitance Integrated ESD Protection Array 25-Oct-2013 Rev. D Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Rating Symbol Value Unit Air ±14 IEC 61000-4-2 (ESD) Contact VESD ±8 kV Peak pulse current (tp=8/20us) VDD-GND IPP 6 A Peak pulse power (tp=8/20us) PPK 100 W Operating Temperature Range TJ -40~85 °C Storage temperature range TSTG -55 ~ 125 °C Lead temperature TL 260 °C . ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Units DC Input Voltage Range VI/O - - 5.5 V Zener Diode Breakdown Voltage, Pin 5 to 2 VBRI/O I=1mA 6 - 9 V Forward Voltage VF - 0.7 - V Diode Reverse Leakage Current, Pins 1,3,4,6 to Ground IIkg VRWM=3V - - 100 nA Pin Capacitance to Ground, Pins 1,3,4,6 CI/O Vdc=0V, f=1MHz Pin 5=3V - 1 - pF Zener Diode Capacitance to Ground, Pin 5 to 2 CZENER Vdc=0V, f=1MHz Pin 5=3V - 40 - pF IPP=1A, tp=8/20us - - 6.8 V IPP=4A, tp=8/20us - - 8.1 V Clamping Voltage VC IPP=9A, tp=8/20us - - 11.5 V |
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