ACE5208 datasheet(1/6 Pages) ACE

Part #	ACE5208

Description	P-Channel Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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1 / 6 page

ACE5208

P-Channel Power MOSFET

VER 1.1

1

Description

The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with low gate voltage.

This device is suitable for use as a load switching application and a wide variety of other applications.

Features

• Advanced trench MOSFET process technology

• Ultra low on-resistance with low gate charge

Applications

• PWM application

• Load switch

• Battery charge in cellular handset

Absolute Maximum Ratings

Parameter

Symb

ol

Max

Unit

Drain-Source Voltage

VDSS

-12

V

Gate-Source Voltage

VGS

±8

Drain Current-Continuous

ID

-6

A

Drain Current-Pulsed (note 1)

IDM

-20

Power Dissipation (note 2, TA=25℃)

PD

1.5

W

Maximum Power Dissipation (note 3, TC=25℃)

12

Thermal Resistance from Junction to Ambient (note 4)

RθJA

83.3

℃/W

Thermal Resistance from Junction to case (note 4)

RθJC

10.4

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55~+150

Packaging Type

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ACE5208 Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE5208 Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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