DATA SHEET

SILICON TRANSISTOR

Document No. P10389EJ2V0DS00 (2nd edition)

(Previous No. TD-2401)

Date Published July 1995 P

NE68519 / 2SC5010

DESCRIPTION

The NE68519 / 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal

amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3

process) which is a proprietary fabrication technique.

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

FEATURES

• Low Voltage Use.

• Low NF

• Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

NE68519-A

2SC5010-A

50 pcs/Unit.

NE68519-T1-A

2SC5010-T1-A

3 kpcs/Reel.

* Pleasecontacta sales representative,ifyourequireevaluation

sample. Unit sample quantity shall be 50 pcs.

Collector to Base Voltage

9

V

Collector to Emitter Voltage

6

V

Emitter to Base Voltage

2

V

Collector Current

30

mA

Total Power Dissipation

125

mW

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

Embossed tape 8 mm wide.

Pin3(Collector) face to perforation side

of the tape.

PACKAGE DIMENSIONS

in milimeters

1.6 ± 0.1

0.8 ± 0.1

2

1

3

1. Emitter

2. Base

3. Collector

JEITA

Part No.