MMBTA42W datasheet(2/2 Pages) SECOS

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Any changing of specification will not be informed individual

MMBTA42W

NPN Silicon

General Purpose Transistor

http://www.SeCoSGmbH.com

Elektronische Bauelemente

MMBTA42W

Figure 1. DC Current Gain

VR, REVERSE VOLTAGE (VOLTS)

0.1

100

0.1

1.0

1000

Ceb @ 1MHz

Figure 2. Capacitance

IC, COLLECTOR CURRENT (mA)

100

7.0

5.0

3.0

2.0

TJ = 25°C

VCE = 20 V

f = 20 MHz

1.0

IC, COLLECTOR CURRENT (mA)

Figure 3. Current−Gain − Bandwidth

1.4

0.0

1.2

1.0

0.8

0.6

0.4

0.2

100

0.1

1.0

100

1.0

Ccb @ 1MHz

VBE(on) @ 25°C, VCE = 10 V

VCE(sat) @ 25°C, IC/IB = 10

VBE(sat) @ 25°C, IC/IB = 10

VCE(sat) @ 125°C, IC/IB = 10

VCE(sat) @ −55°C, IC/IB = 10

VBE(sat) @ 125°C, IC/IB = 10

VBE(sat) @ −55°C, IC/IB = 10

VBE(on) @ 125°C, VCE = 10 V

VBE(on) @ −55°C, VCE = 10 V

Figure 4. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

120

0.1

1.0

100

TJ = +125°C

25°C

−55°C

VCE = 10 Vdc

100

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