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QG201B Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # QG201B
Description  2.0 Amp Surface Mount Silicon Rectifiers
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

QG201B Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  QG201B_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH QG201B_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
QG201B~QG207B
50 ~ 1000 V
2.0 Amp Surface Mount Silicon Rectifiers
14-Aug-2013 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
Ideal for surface mount applications
Easy pick and place
Built-in strain relief
High surge current capability
PACKAGING INFORMATION
Polarity: Color band denotes cathode end
Case: Molded plastic
Terminals: Solder plated, solderable per MIL-STD-202F,
method 208 guaranteed
Epoxy: UL94-V0 rate flame retardant
Weight: 0.102 grams (approximately)
PACKAGE INFORMATION
Package
MPQ
Leader Size
SMB
3K
13 inch
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameters
Symbol
QG
201B
QG
202B
QG
203B
QG
204B
QG
205B
QG
206B
QG
207B
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Instantaneous Forward Voltage @
IF = 2.0 A
VF
1.25
V
Maximum Forward Average Forward
Rectified Current
IO
2.0
A
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
50
A
TJ=25°C
5.0
Maximum Reverse Current
TJ=100°C
IR
100
A
Typical Thermal Resistance
RJA
53
°C/W
Typical Thermal Resistance
RJL
16
°C/W
Typical Diode Junction Capacitance
1
CJ
35
pF
Storage and Operating Temperature Range
TSTG, TJ
55~150
°C
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
SMB
A
B
E
G
D
F
C
H
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.91
2.20
E
-
0.203
B
4.06
4.75
F
5.08
5.59
C
3.30
3.94
G
0.76
1.52
D
1.95
2.65
H
0.15
0.31


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