Document No. D14855EJ3V1DS00 (3rd edition)

Date Published January 2010 N

Printed in Japan

SILICON POWER TRANSISTORS

2SA1069, 1069A

PNP SILICON

FOR HIGH-SPEED SWITCHING

DATA SHEET

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availability and additional information.

2002

The 2SA1069/1069A are the mold power transistors developed for

high-speed switching, and is ideal for use as a driver in devices such

as switching regulators, DC/DC converters, and high-frequency power

amplifiers.

FEATURES

• Low collector saturation voltage

• Fast switching speed

°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

−80

V

Collector to emitter voltage

−60/−80

V

Emitter to base voltage

−12

V

Collector current (DC)

−5.0

A

Collector current (pulse)

PW

≤ 300

duty cycle

≤ 10%

−10

A

Base current (DC)

−2.5

A

°C

30

W

Total power dissipation

°C

1.5

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

ORDERING INFORMATION

Part No.

Package

2SA1069

2SA1069A

TO-220AB

(MP-25)

2SA1069-Z

2SA1069A-Z

TO-220SMD

(MP-25Z)

(TO-220AB)

(TO-220SMD)

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