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SCG3019 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SCG3019
Description  N-Channel Enhancement MOSFET
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SCG3019 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SCG3019
N-Channel Enhancement MOSFET
18-Dec-2013 Rev. B
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
SOT-523
KN
Top View
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low on-resistance.
Fast switching speed.
Low voltage drive makes this device ideal for portable equipment.
Easily designed drive circuits.
Easy to parallel.
Marking
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-523
3K
7 inch
MAXIMUM RATINGS (TA=25℃ unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
0.1
A
Total Power Dissipation
PD
0.15
W
Operating Junction Temperature Range
TJ
150
°C
Operating Storage Temperature Range
TSTG
-55~150
°C
Thermal Resistance, Junction to Ambient
RθJA
833
°C / W
Top View
A
L
M
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.5
1.7
G
-
0.1
B
1.45
1.75
H
0.55 REF.
C
0.7
0.9
J
0.1
0.2
D
0.7
0.9
K
-
E
0.9
1.1
L
0.5 TYP.
F
0.15
0.35
M
0.25
0.325


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