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SCS0240DF Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCS0240DF Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  SCS0240DF 0.2 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente 08-Dec-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Anode Cathode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ● Low turn-on voltage ● Fast switching ● PN junction guard for transient and ESD protection ● Designed for surface mount application ● Plastic material-UL recognition flammability classification 94V-O APPLICATION ● Surface mount fast switching diode PACKAGE INFORMATION MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at TA = 25°C) Parameter Symbol Limits Unit Peak repetitive peak reverse voltage VRRM 40 V Working peak reverse voltage VRWM 40 V DC reverse voltage VR 40 V Forward continuous current IF 200 mA Peak forward surge current @ < 1.0 s IFSM 600 mA Power Dissipation Pd 200 mW Thermal resistance junction to ambient RθJA 625 ℃ / W Junction, Storage Temperature Range TJ, TSTG -55 ~ +125 ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR)R 40 - - V IR= 10A Forward Voltage VF - - 0.38 V IF = 1.0mA - - 0.5 IF = 10mA - - 1.0 IF = 40mA Reverse Current IR - 20 200 nA VR = 30V Capacitance between terminals CT - 4 5 pF VR = 0V, f=1.0MHz Reverse Recovery Time TRR - - 5 ns IF =IR= 10mA, RL=100Ω Product Marking Code SCS0240DF 43 DFN1006-2 C A B E D H F F G REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 0.55 0.675 E 0.20 0.30 B 0.95 1.075 F 0.05REF C 0.47 0.53 G 0.45 0.55 D 0 0.05 H 0.65TYP |
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