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FYA-R102510BCZXX-21 Datasheet(PDF) 4 Page - Ningbo Foryard Optoelectronics Co., Ltd.

Part # FYA-R102510BCZXX-21
Description  Bargraph Digit Display
PDF  5 Pages
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Manufacturer  FORYARD [Ningbo Foryard Optoelectronics Co., Ltd.]
Direct Link  http://www.foryard.com
Logo FORYARD - Ningbo Foryard Optoelectronics Co., Ltd.

FYA-R102510BCZXX-21 Datasheet(HTML) 4 Page - Ningbo Foryard Optoelectronics Co., Ltd.

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Model No.
Rev.
Min
5
—
—
—
-40
-40
■
■
■
■ Electrical-Optical Characteristics
●
Color Code & Chip Characteristics:(Test Condition:IF=20mA)
Typ
H
Red
90nm
2.00
S
Hi Red
20nm
1.80
D
Super Red
20nm
1.90
E
Orange
35nm
1.90
A
Amber
35nm
1.90
Y
Yellow
35nm
1.90
G
Green
10nm
1.90
3.40
2.80
2.80
PG Pure Green
36nm
2.80
UHR Ultra Hi Red
20nm
1.90
UR Ultra Red
20nm
1.90
UE Ultra Orange
20nm
1.90
UA Ultra Amber
AlGaInP
20nm
1.90
2.50
UY Ultra Yellow
AlGaInP
20nm
1.90
2.50
UG Ultra Green
AlGaInP
30nm
1.90
2.50
PG Ultra Pure Green
InGaN
36nm
2.80
3.80
BG Ultra Bluish Green InGaN
36nm
2.80
3.80
30nm
2.80
30nm
2.80
Note:
1.Luminous Intensity is based on the Foryard standards.
2.Pay attention about static for InGaN
Page
： 4/5
(Ta=25
℃)
FYA-R102510BC/DZXX-XX
A
Model No.
：
：
：
：FYA-R102510BC/DXX-XX
100
V
—
Pd
260~310
60~100
50~140~190
470nm
505nm
30~60~80
590nm
—
2.50
2.50
Unit
mA
15~20
14~20
1
Luminous
Intensity
(Iv)
Unit:mcd
(Ta=25
℃)
Max
—
Test Condition
150
■
■
■
■ Absolute maximum ratings
GaAsP
2.50
AlGaAs/DH
650nm
2.50
Tstr
—
+85
Operating Temperature
Max
Peak Wave
Length(λP)
Spectral
Line
halfwidth(∆
λ1/2)
610nm
Storage Temperature
Topr
Emitting Color
Dice
Material
AlGaInP
625nm
2.50
2.50
2.50
AlGaInP
460nm
520nm
InGaN
60nm
3.80
3.80
4.40
UB
460nm
635nm
3.80
570nm
26~38
13~18
625nm
GaAsP
GaAsP
2.50
2.50
0.7~1(mw)
60~120
260~310
InGaN
AlGaInP
640nm
30~60
520nm
430nm
6~12(mw)
40~100~150
3.80
14~18
570nm
590nm
B
Blue
InGaN
Ultra brightness
Http://www.foryard.com
Segment-to-Segment Luminous Intensity ratio(Iv-M)
1.5:1
610nm
6~12(mw)
4~6(mw)
470nm
80~90~120
3.80
80~90~120
Ultra Blue
mA
mW
℃
Standard brightness
Forward
Voltage(VF) Unit:V
30
GaP
AlGaAs/SH
660nm
700nm
GaP
2.50
℃
+85
13~18
Pulse Current
Ipeak
Duty=0.1mS,1KHz
Forward Current
IF
—
Power Dissipation
Symbol
Parameter
Value
Reverse Voltage
VR
IR=30



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