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IRG4BC30WS Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC30WS Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 23 IC @ TC = 100°C Continuous Collector Current 12 A ICM Pulsed Collector Current 92 ILM Clamped Inductive Load Current 92 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy 180 mJ PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR PD - 91790 E C G n-channel Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) Benefits VCES = 600V VCE(on) typ. = 2.10V @VGE = 15V, IC = 12A 8/13/98 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.2 °C/W RθJA Junction-to-Ambient, ( PCB Mounted,steady-state)* ––– 40 Thermal Resistance Absolute Maximum Ratings W 2 D Pa k www.irf.com 1 * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. |
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Similar Description - IRG4BC30WS |
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