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IRG4PC30KD Datasheet(PDF) 1 Page - International Rectifier

Part # IRG4PC30KD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
PDF  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC30KD Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
28
IC @ TC = 100°C
Continuous Collector Current
16
ICM
Pulsed Collector Current
Q
58
A
ILM
Clamped Inductive Load Current
R
58
IF @ TC = 100°C
Diode Continuous Forward Current
12
IFM
Diode Maximum Forward Current
58
tsc
Short Circuit Withstand Time
10
µs
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
100
PD @ TC = 100°C
Maximum Power Dissipation
42
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf•in (1.1 N•m)
IRG4PC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-ch an nel
C
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
Short Circuit Rated
UltraFast IGBT
4/15/2000
PD -91587A
TO-247AC
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
–––
–––
1.2
RθJC
Junction-to-Case - Diode
–––
–––
2.5
°C/W
RθCS
Case-to-Sink, flat, greased surface
–––
0.24
–––
RθJA
Junction-to-Ambient, typical socket mount
–––
–––
40
Wt
Weight
–––
6 (0.21)
–––
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
Features
Features
Features
Features
Features
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGBC30KD2 and IRGBC30MD2
products
• For hints see design tip 97003
Benefits
www.irf.com
1


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