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IRG4PC50KD Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PC50KD Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PC50KD www.irf.com 2 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA D V(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage — 0.47 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.84 2.2 IC = 30A VGE = 15V — 2.19 — V IC = 52A see figures 2, 5 — 1.79 — IC = 25A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA D VGE(th)/DTJ Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 17 24 — S VCE = 100V, IC = 30A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 6500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A see figure 13 — 1.2 1.5 IC = 25A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 200 300 IC = 30A Qge Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V see figure 8 Qgc Gate - Collector Charge (turn-on) — 85 127 VGE = 15V td(on) Turn-On Delay Time — 63 — tr Rise Time — 49 — TJ = 25°C td(off) Turn-Off Delay Time — 150 220 IC = 30A, VCC = 480V tf Fall Time — 95 140 VGE = 15V, RG = 5.0W Eon Turn-On Switching Loss — 1.61 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.84 — mJ and diode reverse recovery Ets Total Switching Loss — 2.45 3.0see figures 9,10,18 tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10W , VCPK < 500V td(on) Turn-On Delay Time — 61 — TJ = 150°C, see figures 11,18 tr Rise Time — 46 — IC = 30A, VCC = 480V td(off) Turn-Off Delay Time — 310 — VGE = 15V, RG = 5.0W tf Fall Time — 170 — Energy losses include "tail" Ets Total Switching Loss — 3.53 — mJ and diode reverse recovery LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 3200 — VGE = 0V Coes Output Capacitance — 370 — pF VCC = 30V see figure 7 Cres Reverse Transfer Capacitance — 95 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 50 75 ns TJ = 25°C see figure — 105 160 TJ = 125°C 14 IF = 25A Irr Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C see figure — 8.0 15 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C see figure — 420 1200 TJ = 125°C 16 di/dt 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C see figure During tb — 160 — TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns |
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