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AN4429 Datasheet(PDF) 3 Page - STMicroelectronics |
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AN4429 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() DocID025710 Rev 2 3/14 AN4429 C90FL Flash erase operation 13 1 C90FL Flash erase operation C90FL Flash erase operation consists of multiple steps as shown in Figure 1 which is implemented by the C90FL Flash memory controller hardware. First, all bits in the selected Flash block(s) are programmed in order to verify the level that allows the erase function to start at consistent state. Then the erase step deletes all bits. Since the erase is a bulk operation in which an erase pulse moves all the bits in a Flash block, some bits are over- erased, for example, under the compaction of check up or under a software program of verify level. At the compaction step the over-erased columns are compacted back to reduce column leakage. And finally all the bits below software program verify level are reprogrammed with very low gate, in order to avoid overshoot of erase verify level for any bits. As a result, when an erase operation is completed, all the bits in the selected blocks have their threshold voltage within a pre-defined window, between erase verify level and software program verify level. Figure 1. C90FL Flash erase operation flow |
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