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IRG4PSC71UD Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PSC71UD Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PSC71UD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– 340 520 IC = 60A Qge Gate - Emitter Charge (turn-on) ––– 44 66 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ––– 160 240 VGE = 15V td(on) Turn-On Delay Time ––– 90 ––– TJ = 25°C tr Rise Time ––– 94 ––– ns IC = 60A, VCC = 480V td(off) Turn-Off Delay Time ––– 245 368 VGE = 15V, RG = 5.0Ω tf Fall Time ––– 110 167 Energy losses include "tail" and Eon Turn-On Switching Loss ––– 3.26 ––– diode reverse recovery. Eoff Turn-Off Switching Loss ––– 2.27 ––– mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss ––– 5.53 7.2 td(on) Turn-On Delay Time ––– 91 ––– TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time ––– 88 ––– ns IC = 60A, VCC = 480V td(off) Turn-Off Delay Time ––– 353 ––– VGE = 15V, RG = 5.0Ω tf Fall Time ––– 150 ––– Energy losses include "tail" and Ets Total Switching Loss ––– 7.1 ––– mJ diode reverse recovery. LE Internal Emitter Inductance ––– 13 ––– nH Measured 5mm from package Cies Input Capacitance ––– 7500 ––– VGE = 0V Coes Output Capacitance ––– 720 ––– pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ––– 93 ––– ƒ = 1.0MHz trr Diode Reverse Recovery Time ––– 82 120 TJ = 25°C See Fig. ––– 140 210 TJ = 125°C 14 IF = 60A Irr Diode Peak Reverse Recovery Current ––– 8.2 12 TJ = 25°C See Fig. ––– 13 20 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge ––– 364 546 TJ = 25°C See Fig. ––– 1084 1625 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery ––– 328 ––– TJ = 25°C See Fig. During tb ––– 266 ––– TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.39 ––– V/°C VGE = 0V, IC = 10mA VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.67 2.0 IC = 60A VGE = 15V ––– 1.95 ––– IC = 100A See Fig. 2, 5 ––– 1.71 ––– IC = 60A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE, IC = 1.5mA gfe Forward Transconductance 47 70 ––– S VCE = 50V, IC = 60A ICES Zero Gate Voltage Collector Current ––– ––– 500 µA VGE = 0V, VCE = 600V ––– ––– 13 mA VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ––– 1.4 1.7 IC = 60A See Fig. 13 ––– 1.3 ––– IC = 60A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V ns A nC A/µs |
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