SSG4835P_15 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG4835P

-9.5 A, -30 V, RDS(ON) 19 m

P-Ch Enhancement Mode Power MOSFET

14-Jul-2014 Rev. C

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

VGS(th)

-1

VDS= VGS, ID= -250μA

Gate-Body Leakage

IGSS

±100

VDS= 0V, VGS= ±20V

-1

μA

VDS= -24V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-25

μA

VDS= -24V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(on)

-20

VDS= -5V, VGS= -10V

VGS= -10V, ID= -7.6A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID= -6A

Forward Transconductance

gfs

VDS= -15V, ID= -7.6A

Diode Forward Voltage

VSD

-0.74

IS= -2A, VGS= 0V

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

6.8

Gate-Drain Charge

Qgd

ID= -7.6A

VDS= -15V

VGS= -4.5V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDS= -15V,

ID= -7.6A

VGEN= -10V,

RL= 1.9Ω

RG= 6Ω

Input Capacitance

Ciss

1934

Output Capacitance

Coss

408

Reverse Transfer Capacitance

Crss

226

VDS= -15V

VGS=0

f=1MHz

Notes:

Pulse test：PW ≦ 300μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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