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UD02N65 Datasheet(PDF) 2 Page - Unitpower Technology Limited

Part # UD02N65
Description  N-Ch 650V Fast Switching MOSFETs
PDF  4 Pages
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Manufacturer  UNITPOWER [Unitpower Technology Limited]
Direct Link  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UD02N65 Datasheet(HTML) 2 Page - Unitpower Technology Limited

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機密
第 2 頁
2011-03-03
- 2 -
2
N-Ch 650V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
650
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.37
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=1A
---
6.3
8
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
2
---
5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-43
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=520V , VGS=0V , TJ=25℃
---
---
2
uA
IGSS
Gate-Source Leakage Current
VGS=±30V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=10V , ID=1A
---
1.7
---
S
Qg
Total Gate Charge (10V)
VDS=520V , VGS=10V , ID=1A
---
8
---
nC
Qgs
Gate-Source Charge
---
2.56
---
Qgd
Gate-Drain Charge
---
2.67
---
Td(on)
Turn-On Delay Time
VDD=300V , VGS=10V , RG=10Ω,
ID=1A
---
4.8
---
ns
Tr
Rise Time
---
18.4
---
Td(off)
Turn-Off Delay Time
---
10.8
---
Tf
Fall Time
---
23.2
---
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
290
---
pF
Coss
Output Capacitance
---
25
---
Crss
Reverse Transfer Capacitance
---
4
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=50V , L=1mH , IAS=1.5A
3.2
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
2
A
ISM
Pulsed Source Current
2,6
---
---
4
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
IF=1A , dI/dt=100A/µs , TJ=25℃
---
178
---
nS
Qrr
Reverse Recovery Charge
---
382
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=1.5A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
UD02N65



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