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BCW68 Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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BCW68 Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
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2 / 2 page ![]() 1998. 6. 15 2/2 BCW68 Revision No : 1 ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -45 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10μ A, IC=0 -5.0 - - V Collector Cut-off Current ICES VEB=0V, VCE=-45V - - -20 nA Ta=150 ℃, V EB=0V, VCE=-45V - - -20 μA Emitter Cut-off Current IEBO IC=0, VEB=-4V - - -20 nA DC Current Gain Group F hFE VCE=-1V, IC=-10mA 75 - - Group G 120 - - Group F VCE=-1V, IC=-100mA 100 - 250 Group G 160 - 400 Group F VCE=-1V, IC=-500mA 35 - - Group G 60 - Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-10mA - - -1.25 V IC=-500mA, IB=-50mA - - -2.0 Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - - -0.3 V IC=-500mA, IB=-50mA - - -0.7 Transition Frequency fT IC=-80mA, VCE=-10V, f=100MHz 100 - - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 18 pF Collector Input Capacitance Cib VEB=-0.5V, f=1MHz - - 80 pF Noise Figure NF IC=-0.2mA, VCE=-5V, Rg=1k Ω, f=1kHz - 2.0 10 dB |
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