DCR890F65 datasheet(2/11 Pages) DYNEX

2 / 11 page

SEMICONDUCTOR

DCR890F65

2/11

www.dynexsemi.com

CURRENT RATINGS

Tcase = 60°C unless stated otherwise

Symbol

Parameter

Test Conditions

Max.

Units

Double Side Cooled

IT(AV)

Mean on-state current

Half wave resistive load

894

IT(RMS)

RMS value

1404

Continuous (direct) on-state current

1371

SURGE RATINGS

Symbol

Parameter

Test Conditions

Max.

Units

ITSM

Surge (non-repetitive) on-state current

10ms half sine, Tcase = 125°C

12.0

2t for fusing

VR = 0

0.72

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions

Min.

Max.

Units

Rth(j-c)

Thermal resistance

– junction to case

Double side cooled

0.0184

°C/W

Single side cooled

Anode DC

0.0333

°C/W

Cathode DC

0.0418

°C/W

Rth(c-h)

Thermal resistance

– case to heatsink

Clamping force 23 kN

Double side

0.004

°C/W

(with mounting compound)

Single side

0.008

°C/W

Tvj

Virtual junction temperature

Blocking VDRM / VRRM

125

°C

Tstg

Storage temperature range

-55

125

°C

Clamping force

20.0

25.0

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