AN3994 datasheet(5/53 Pages) STMICROELECTRONICS

Part #	AN3994

Description	One of the bigger challenges

PDF	53 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 53 page

AN3994

ST multidrain technology evolution

Doc ID 022380 Rev 1

5/53

ST multidrain technology evolution

At the beginning of 2000, STMicroelectronics introduced the super junction MOSFET

technology to the market, the basic structure of which is clear from Figure 1:

Figure 1.

Standard HV MOSFET device cross section

Figure 2.

MD device cross section

As concerns standard MOSFET technology, designers understand that RDS(on) * area and

breakdown voltage are associated with a theoretical limit which strictly depends on the

material and can not be overcome. Development efforts of the major suppliers have mainly

focused on making the RDS(on)* area as close as possible to this physical limit, by reducing

the most important contributions of a high voltage Power MOSFET to the total RDS(on).

AN3994 Datasheet(PDF) 5 Page - STMicroelectronics