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VB20150C Datasheet(PDF) 2 Page - Vishay Siliconix |
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VB20150C Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() V20150C, VF20150C, VB20150C, VI20150C www.vishay.com Vishay General Semiconductor Revision: 20-Nov-12 2 Document Number: 89046 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 150 (minimum) -V Instantaneous forward voltage per diode (1) IF = 5 A TA = 25 °C VF 0.79 - V IF = 10 A 1.05 1.20 IF = 5 A TA = 125 °C 0.59 - IF = 10 A 0.69 0.75 Reverse current per diode (2) VR = 100 V TA = 25 °C IR 1.3 - μA TA = 125 °C 1.2 - mA VR = 150 V TA = 25 °C - 150 μA TA = 125 °C 315 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20150C VF20150C VB20150C VI20150C UNIT Typical thermal resistance per diode RJC 2.8 5.0 2.8 2.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20150C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF20150C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20150C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB20150C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI20150C-E3/4W 1.45 4W 50/tube Tube Case Temperature (°C) 25 20 0 0 25 50 75 100 125 150 175 VF20150C V(B,I)20150C Resistive or Inductive Load Mounted on Specific Heatsink 15 10 5 0 2 6 10 02 8 12 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 6 4 8 10 4 D = t p/T t p T |
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