- Metal-on-silicon schottky barrier

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin(Sn) lead finish with Nickel(Ni) underplate

- Packing code with suffix "G" means

green compound (halogen-free)

- Case: SOT- 23, molded plastic

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260

- Weight: 0.008g (approximately)

SYMBOL

UNIT

mW

V

V

mA

mA

A

SYMBOL

UNIT

Reverse Breakdown Voltage

V

μA

Junction Capacitance

pF

Reverse Recovery Time

ns

Notes : 1. Test Condition : 8.3ms single half sine-wave superimposed on rated load

Notes : 2. Valid provided that electrodes are kept at ambient temperature

Document Number: DS_S1412006

Version: F14

BAS40 / -04 / -05 / -06

Taiwan Semiconductor

Small Signal Product

Low VF SMD Schottky Barrier Diode

FEATURES

MECHANICAL DATA

SOT-23

PARAMETER

VALUE

357

-65 to +125

Non-Repetitive Peak Forward Surge Current

PARAMETER

MIN

MAX

0.50

Reverse Leakage Current

-0.2

Forward Voltage

-5.0

-5.0

-

V

40

-0.38

-

-1.00

200

40

40

200

200

0.6

Power Dissipation

Repetitive Peak Reverse Voltage

Reverse Voltage

Repetitive Peak Forward Current

Mean Forward Current

Junction and Storage Temperature Range

(Note 1)

(Note 2)

Thermal Resistance (Junction to Ambient)