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BC856A Datasheet(PDF) 4 Page - Diodes Incorporated |
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BC856A Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page  BC856A – BC858C Document Number: DS11207 Rev. 24 - 2 4 of 7 www.diodes.com October 2014 © Diodes Incorporated BC856A-BC858C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BC856 BVCBO -80 — — V IC = -10µA BC857 -50 BC858 -30 Collector-Emitter Breakdown Voltage (Note 10) BC856 BVCEO -65 — — V IC = -10mA BC857 -45 BC858 -30 Emitter-Base Breakdown Voltage BVEBO -5 — — V IE = -1µA Collector Cutoff Current ICBO — — -15 nA VCB = -30V -4 µA VCB = -30V, TJ = +150°C Collector Emitter Cutoff Current BC856 ICES — — -15 nA VCE = -80V BC857 -15 VCE = -50V BC858 -15 VCE = -30V Emitter-Base Cutoff Current IEBO — — -100 nA VEB = -5V Small Signal Current Gain (Note 10) BC856A / BC857A / BC858A hfe — 200 — — IC = -2.0mA, VCE = -5V f = 1.0kHz BC856B / BC857B / BC858B 330 BC857C / BC858C 600 Input Impedance (Note 10) BC856A / BC857A / BC858A hie — 2.7 — kΩ BC856B / BC857B / BC858B 4.5 BC857C / BC858C 8.7 Output Admittance (Note 10) BC856A / BC857A / BC858A hoe — 18 — µS BC856B / BC857B / BC858B 30 BC857C / BC858C 60 Reverse Voltage Transfer Ratio (Note 10) BC856A / BC857A / BC858A hre — 1.5x10 -4 — — BC856B / BC857B / BC858B 2x10 -4 BC857C / BC858C 3x10 -4 DC Current Gain (Note 10) BC856A / BC857A / BC858A hFE 125 180 250 — IC = -2.0mA, VCE = -5V BC856B / BC857B / BC858B 220 290 475 BC857C / BC858C 420 520 800 Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — -75 -300 mV IC = - 10mA, IB = -0.5mA -250 -650 IC = - 100mA, IB = -5.0mA Base-Emitter Turn-On Voltage (Note 10) VBE(on) -600 -650 -750 mV IC = -2mA, VCE = -5V — — -820 IC = -10mA, VCE = -5V Base-Emitter Saturation Voltage (Note 10) VBE(sat) — -700 — mV IC = -10mA, IB = -0.5mA -850 -1100 IC = -100mA, IB = -5mA Output Capacitance Cobo — 3 — pF VCB = -10V, f = 1.0MHz Transition Frequency fT 100 200 — MHz VCE = -5V, IC = -10mA, f = 100MHz Noise Figure NF — 2 10 dB VCE = -5V, IC = -200µA RS = 2kΩ, f = 1kHz ∆f = 200Hz Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. |
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