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TSF30U60C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSF30U60C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM V dV/dt V/μs IF = 15A TJ = 25°C VF IF = 15A TJ = 125°C VF TJ = 25°C μA TJ = 125°C mA RθJC °C/W TJ °C TSTG °C Document Number: DS_D1411055 Version: F14 - 55 to +150 V 0.57 Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle 4 Instantaneous reverse current per diode at rated reverse voltage IR Typical thermal resistance per diode Operating junction temperature range - 55 to +150 Storage temperature range Voltage rate of change (Rated VR) 10000 Instantaneous forward voltage per diode ( Note1 ) TYP. MAX. 0.52 0.48 0.43 500 A per diode 15 Mounting torque: 0.56 Nm max. A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 250 TSF30U60C SYMBOL UNIT Maximum repetitive peak reverse voltage Maximum average forward rectified current per device IF(AV) 30 60 - - 60 PARAMETER - Halogen-free according to IEC 61249-2-21 definition ITO-220AB TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: ITO-220AB TSF30U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) Molding compound meets UL 94 V-0 flammability rating Polarity: As marked Weight: 1.7 g (approximately) |
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