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2SA2029-R Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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2SA2029-R Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page  - Moisture sensitivity level 1 - For high voltage switcing and amplifier application - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code - Excellent hFE linearity - Complements the 2SC5658 1. BASE - Case: SOT-723 small outline plastic package 2. EMITTER - Terminal: Matte tin plated, lead free, solderable 3. COLLECTOR per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 1.27mg +/- 20% VCBO V VCEO V VEBO V IC mA PC mW Tj °C Tstg °C SYMBOL MIN TYP MAX UNIT V(BR)CBO -60 V V(BR)CEO -50 V V(BR)EBO -6 V ICBO -0.1 μA IEBO -0.1 μA hFE 120 560 VCE(sat) -0.5 V fT 140 MHz Cob 5pF Remark: Classifiaction of hFE Rank Q Range 120~270 Document Number: DS_S1402005 SOT-723 2SA2029-Q/R/S FEATURES Collector-Base Voltage -50 - Epitaxial planar die construction - Surface Mount Device Type Taiwan Semiconductor Collector-Emitter Voltage Small Signal Product Version: A14 150 150 Junction Temperature VCB=-60V , IE=0 Collector-Base Breakdown Voltage IC=-50μA , IE=0 Collector-Emitter Breakdown Voltage IC=-1mA , IB=0 IC=-50mA , IB=-5mA -6 -150 MECHANICAL DATA PNP Bipolar Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) UNIT SYMBOL LIMIT -60 Collector Cut-Off Currect VEB=-6V , IC=0 -55 to + 150 DC Current Transfer Ration VCB=-6V , IC=1mA VCB=-12V , IE=0 , f=1MHz PARAMETER TEST CONDITION Emitter-Base Breakdown Voltage IE=-50μA , IC=0 Emitter Cut-Off Currect Output Capacitance Collector-Emitter Saturation Voltage VCE=-12V , IC=2mA , f=30MHz RS 180~390 270~560 PARAMETER Transition Frequency Storage Temperature Emitter-Base Voltage Collector Current-Continuous Collector Dissipation |
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