TS13005CIC0 datasheet(2/6 Pages) TSC

2 / 6 page

TS13005

High Voltage NPN Transistor

2/6

Version: D13

Electrical Specifications (Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

IC =1mA, IB =0

BVCBO

700

Collector-Emitter Breakdown Voltage

IC =10mA, IE =0

BVCEO

400

Emitter-Base Breakdown Voltage

IE =0.1mA, IC =0

BVEBO

Collector Cutoff Current

VCE =400V, IB=0

ICEO

250

Collector Cutoff Current

VCB =700V, IE =0

ICBO

Emitter Cutoff Current

VEB = 9V, IC =0

IEBO

Collector-Emitter Saturation Voltage

IC=1A, IB =0.2A

IC=2A, IB =0.5A

IC=4A, IB =1A

VCE(SAT)1

VCE(SAT)2

VCE(SAT)3

0.5

0.6

Base-Emitter Saturation Voltage

IC=1A, IB =0.2A

IC=2A, IB =0.5A

VBE(SAT)1

VBE(SAT)2

1.2

1.6

DC Current Gain

VCE =5V, IC = 1A

VCE =5V, IC = 2A

hFE

Dynamic

Frequency

VCE =10V, IC =0.5A

MHz

Output Capacitance

VCB =10V, f =0.1MHz

Cob

Resistive Load

Turn On Time

VCC =125V, IC =2A,

IB1 =IB2=0.4A, tP =25uS

Duty Cycle ≤1%

tON

0.3

0.7

Storage Time

tSTG

2.2

Fall Time

0.3

0.5

Note: pulse test: pulse width ≤ 300uS, duty cycle ≤ 2%

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