TSM60N03CPROG datasheet(1/4 Pages) TSC

Part #	TSM60N03CPROG

Description	30V N-Channel Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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1 / 4 page

TSM60N03

30V N-Channel Power MOSFET

1/4

Version: A12

TO-252

(DPAK)

PRODUCT SUMMARY

VDS (V)

RDS(on)(mΩ)

ID (A)

30

4.5 @ VGS =10V

60

Features

●

Advanced Trench Technology

●

Low RDS(ON) 4.5mΩ (Max.)

●

Low gate charge typical @ 12nC (Typ.)

●

Low Crss typical @ 140pF (Typ.)

Block Diagram

N-Channel MOSFET

Ordering Information

Part No.

Package

Packing

TSM60N03CP ROG

TO-252

2.5Kpcs / 13

” Reel

Note: “G” denote for Halogen Free Product

Absolute Maximum Rating (TC = 25℃ unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25℃

ID

60

A

TC = 70℃

48

TA = 25℃

19

TA = 70℃

15

Drain Current-Pulsed

*

IDM

140

A

Avalanche Current, L = 0.1mH

IAS, IAR

38

A

Avalanche Energy, L = 0.1mH

EAS, EAR

72

mJ

Maximum Power Dissipation

TC = 25℃

PD

41

W

TC = 70℃

26

TA = 25℃

2.5

TA = 70℃

1.6

Storage Temperature Range

TSTG

-55 to +150

℃

Operating Junction Temperature Range

TJ

-55 to +150

℃

* Limited by maximum junction temperature

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

RӨJC

3

℃/W

Thermal Resistance - Junction to Ambient

RӨJA

50

℃/W

Notes:

Surface mounted on FR4 board t ≤ 10sec

Pin Definition:

1. Gate

2. Drain

3. Source

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