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TSM900N06CPROG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM900N06CPROG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 8 page  TSM900N06 60V N-Channel Power MOSFET 2/8 Version: B14 Thermal Performance Parameter Symbol Limit Unit IPAK DPAK SOT-223 Thermal Resistance - Junction to Case RӨJC 5 5 30 °C/W Thermal Resistance - Junction to Ambient RӨJA 62 62 70 °C/W Electrical Specifications (T C = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 6A RDS(ON) -- 76 90 m Ω VGS = 4.5V, ID = 3A -- 87 100 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.8 2.5 V Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 1 µA VDS = 48V, TJ = 125°C -- -- 10 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 µA Forward Transconductance VDS = 10V, ID = 3A gfs -- 4 -- S Dynamic Total Gate Charge (Note 4,5) VDS = 48V, ID = 6A, VGS = 10V Qg -- 9.3 -- nC Gate-Source Charge (Note 4,5) Qgs -- 2.1 -- Gate-Drain Charge (Note 4,5) Qgd -- 1.8 -- Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz Ciss -- 500 -- pF Output Capacitance Coss -- 45 -- Reverse Transfer Capacitance Crss -- 16 -- Gate Resistance VGS=0V, VDS=0V, f=1MHz Rg -- 2 -- Ω Switching Turn-On Delay Time (Note 4,5) VDD = 30V , VGS = 10V , RG = 3.3W, ID = -1A td(on) -- 2.9 -- ns Turn-On Rise Time (Note 4,5) tr -- 9.5 -- Turn-Off Delay Time (Note 4,5) td(off) -- 18.4 -- Turn-Off Fall Time (Note 4,5) tf -- 5.3 -- Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode VG = VD = 0V, Force Current IS -- -- 11 A Pulse Drain-Source Diode ISM -- -- 44 A Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1.2 V Reverse Recovery Time (Note 4) VGS = 30V, IS = 1A dIF/dt = 100A/µs trr -- 23.2 -- ns Reverse Recovery Charge (Note 4) Qrr -- 14.3 -- nC Note: 1. Limited by maximum junction temperature. 2. Repetitive Rating : Pulsed width limited by maximum junction temperature. 3. VDD=25V,VGS=10V,L=1mH,IAS=7A.,RG=25W,Starting TJ= 25°C 4. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 5. Essentially independent of operating temperature. |
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