TSM4416D datasheet(2/6 Pages) TSC

2 / 6 page

TSM4416D

30V Dual N-Channel MOSFET

2/6

Version: B12

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

1.8

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 24V, VGS = 0V

IDSS

-1.0

Drain-Source On-State Resistance

VGS = 10V, ID = 10A

RDS(ON)

mΩ

VGS = 4.5V, ID = 10A

Forward Transconductance

IS = 1A, VGS = 0V

gfs

Diode Forward Voltage

VGS = 0V, ID = 250uA

VSD

0.71

1.0

Dynamic

Total Gate Charge

VDS = 15V, ID = 10A,

VGS = 5V

7.7

10.01

Gate-Source Charge

Qgs

1.6

2.08

Gate-Drain Charge

Qgd

3.1

4.03

Input Capacitance

VDS = 15V, VGS = 0V,

f = 1.0MHz

Ciss

890

Output Capacitance

Coss

159.6

Reverse Transfer Capacitance

Crss

83.2

Switching

b,c

Turn-On Delay Time

VDD = 15V, ID = 10A,

VGEN = 10V, RG = 0.3Ω

td(on)

11.1

22.2

Turn-On Rise Time

8.4

16.8

Turn-Off Delay Time

td(off)

25.3

50.6

Turn-Off Fall Time

2.8

5.6

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

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